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New Metrology Approach for Single Molecular Device: Probing of Molecular Energy Gap by Electrical and Optical Measurements

机译:单一分子装置的新计量学方法:通过电学和光学测量探测分子能隙

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We report on electrical and optical measurements to probe the energy gap in single molecular devices. The closeness of energy of the high occupied molecular orbital - low unoccupied molecular orbital (HOMO-LUMO) energy gap was detected by electric (ΦBΣ) and optic measurements (Δo), ΦBΣ ≈ Δo. The ‘electrical gap’, ΦBΣ, consists of sum of two barriers, ΦBLUMO and ΦBHOMO, for tunneling of electrons and holes through molecular barrier correspondingly, in devices with a different pair of electrodes at low biases and difference in work function, ΔWF , between these metal electrodes:ΦBΣ = ΦBLUMO + ΦBHOMO+ ΔWF . We fabricated and tested two devices with a pair of gold (Au) and aluminum (Al) electrodes to find ΦBHOMO (ΦBAu) and ΦBLUMO (ΦBAl) using Simmons tunneling model. The symbols ΦBLUMO and ΦBHOMO signify energy difference between HOMO and LUMO levels in a molecular system with respect to the Au and Al electrode’s Fermi level. Comparison of ΦBΣ and Δo can identify presence of electrically active molecules between electrodes in nanoscale devices.
机译:我们报告电和光学测量,以探测单分子设备中的能隙。通过电(Φ B Σ)和光学测量(Δ)检测高占据分子轨道-低未占据分子轨道(HOMO-LUMO)能隙的能量接近性 o ),Φ B Σ≈Δ o 。 “电气间隙”Φ B Σ由两个势垒之和Φ B LUMO和Φ B HOMO,用于在低偏置且功函数差ΔWF不同的一对电极之间的电子和空穴通过分子势垒的隧穿,这些电极在以下金属电极之间:Φ B Σ B LUMO +Φ B HOMO +ΔWF。我们制造并测试了两个带有一对金(Au)和铝(Al)电极的设备,以找到Φ B HOMO(Φ B Au)和Φ B LUMO(Φ B Al)使用Simmons隧道模型。 Φ B LUMO和Φ B HOMO符号表示分子系统中HOMO和LUMO能级相对于Au和Al电极的费米能级的能量差。比较Φ B Σ和Δ o 可以识别纳米级器件中电极之间电活性分子的存在。

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