New method of MOVPE process design for the growth of FGM AlGaAs/GaAs photodetectors

Andrej Vincze; Beata Sciana; Bogdan Paszkiewicz; Damian Radziewicz; Jaroslav Kovac; Marek Tlaczala; Mateusz Wosko; Regina Paszkiewicz

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New method of MOVPE process design for the growth of FGM AlGaAs/GaAs photodetectors

机译：用于生长FGM AlGaAs / GaAs光电探测器的MOVPE工艺设计的新方法

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《Optica applicata》 |2009年第4期|共页
作者
Andrej Vincze; Beata Sciana; Bogdan Paszkiewicz; Damian Radziewicz; Jaroslav Kovac; Marek Tlaczala; Mateusz Wosko; Regina Paszkiewicz;
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1. New method of MOVPE process design for the growth of FGM AlGaAs/GaAs photodetectors MATEUSZ [J] . MATEUSZ WOSKO, BOGDAN PASZKIEWICZ, DAMIAN RADZIEWICZ, Optica applicata . 2009,第4期

机译：用于生长FGM AlGaAs / GaAs光电探测器MATEUSZ的MOVPE工艺设计的新方法
2. In situ monitoring of parasitic growth on the quartz top plate during the MOVPE growth of GaAs/AlGaAs structures [J] . K.J. Weeks, S.J.C. Irvine, S.W. Bland Journal of Crystal Growth . 2003,第1a2期

机译：GaAs / AlGaAs结构的MOVPE生长过程中石英顶板上寄生生长的原位监测
3. Growth of GaAs/AlGaAs hexagonal pillars on GaAs (111)B surfaces by selective-area MOVPE [J] . Motohisa J, Takeda J, Inari M, Physica, E. Low-dimensional systems & nanostructures . 2004,第3a4期

机译：通过选择性区域MOVPE在GaAs（111）B表面上生长GaAs / AlGaAs六角形柱
4. GaAs/AlGaAs multi-quantum-well far-infrared photodetectors grown by the MOVPE process [C] . Erwang Mao, Univ. of Colorado/Boulder, Boulder, Infrared Detectors: State of the Art . 1992

机译：通过MOVPE工艺生长的GaAs / AlGaAs多量子阱远红外光电探测器
5. Growth of low disorder GaAs/AlGaAs heterostructures by molecular beam epitaxy for the study of correlated electron phases in two dimensions. [D] . Watson, John D. 2015

机译：通过分子束外延生长低无序GaAs / AlGaAs异质结构，以研究二维相关电子相。
6. Modeling of the growth of GaAs–AlGaAs core–shell nanowires [O] . Qian Zhang, Peter W Voorhees, Stephen H Davis 2017

机译：GaAs-AlGaAs核-壳纳米线的生长建模
7. MOVPE growth of AlGaAs/GaAs and InGaP/GaAs structures on patterned GaAs substrates [O] . Kudela R., Strinchovanec P., Gregusova D., 2004

机译：在图案化的GaAs衬底上AlGaAs / GaAs和InGaP / GaAs结构的MOVPE生长
8. Trimethylamine alane for low-pressure MOVPE growth of AlGaAs-based materials and device structures. [R] . R. P. Schneider R. P. Bryan E. D. Jones R. M. Biefield G. R. Olbright 1991

机译：三甲胺铝烷用于低压mOVpE生长alGaas基材料和器件结构。

New method of MOVPE process design for the growth of FGM AlGaAs/GaAs photodetectors

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