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In Situ AFM Study of Crystal Growth on a Barite (001) Surface in BaSO 4 Solutions at 30 ???°C

机译:在30°C下在BaSO 4溶液中重晶石(001)表面上晶体生长的原位AFM研究

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The growth behavior and kinetics of the barite (001) surface in supersaturated BaSO 4 solutions (supersaturation index ( SI ) = 1.1?¢????4.1) at 30 ???°C were investigated using in situ atomic force microscopy (AFM). At the lowest supersaturation, the growth behavior was mainly the advancement of the initial step edges and filling in of the etch pits formed in the water before the BaSO 4 solution was injected. For solutions with higher supersaturation, the growth behavior was characterized by the advance of the < uv 0> and [010] half-layer steps with two different advance rates and the formation of growth spirals with a rhombic to bow-shaped form and sector-shaped two-dimensional (2D) nuclei. The advance rates of the initial steps and the two steps of 2D nuclei were proportional to the SI . In contrast, the advance rates of the parallel steps with extremely short step spacing on growth spirals were proportional to SI 2 , indicating that the lateral growth rates of growth spirals were directly proportional to the step separations. This dependence of the advance rate of every step on the growth spirals on the step separations predicts that the growth rates along the [001] direction of the growth spirals were proportional to SI 2 for lower supersaturations and to SI for higher supersaturations. The nucleation and growth rates of the 2D nuclei increased sharply for higher supersaturations using exponential functions. Using these kinetic equations, we predicted a critical supersaturation ( SI ?¢???? 4.3) at which the main growth mechanism of the (001) face would change from a spiral growth to a 2D nucleation growth mechanism: therefore, the morphology of bulk crystals would change.
机译:使用原位原子力显微镜(AFM)研究了重晶石(001)表面在30℃下的过饱和BaSO 4溶液(过饱和指数(SI)= 1.1≤≤4.1)中的生长行为和动力学。 )。在最低的过饱和度下,生长行为主要是初始台阶边缘的前进和注入BaSO 4溶液之前在水中形成的蚀刻坑的填充。对于具有较高过饱和度的解决方案,其生长行为的特征是和[010]半层步骤以两种不同的推进速率前进,并形成了菱形至弓形和扇形的生长螺旋。形的二维(2D)核。二维核初始步骤和两步的推进速度与SI成正比。相反,在生长螺旋上具有极短步距的平行步的前进速率与SI 2成正比,表明生长螺旋的横向生长速率与步距成正比。每个步骤的前进速度对步骤间隔上的生长螺旋线的这种依赖性预测,对于较低的过饱和度,沿着生长螺旋线的[001]方向的生长速度与SI 2成正比,对于较高的过饱和度,其与SI成正比。使用指数函数,对于更高的过饱和度,二维核的成核和生长速率急剧增加。使用这些动力学方程式,我们预测了临界过饱和(SI =?4.3),在该温度下(001)面的主要生长机理将从螺旋生长变为2D成核生长机理:因此,大块晶体会改变。

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