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Electrostatic properties of few-layer MoS2 films

机译:几层MoS2薄膜的静电性能

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摘要

Two-dimensional MoS2-based materials are considered to be one of the most attractive materials for next-generation nanoelectronics. The electrostatic properties are important in designing and understanding the performance of MoS2-based devices. By using Kelvin probe force microscopy, we show that few-layer MoS2 sheets exhibit uniform surface potential and charge distributions on their surfaces but have relatively lower surface potentials on the edges, folded areas as well as defect grain boundaries.
机译:基于二维MoS2的材料被认为是下一代纳米电子学中最具吸引力的材料之一。静电特性对于设计和了解基于MoS2的设备的性能很重要。通过使用开尔文探针力显微镜,我们显示了几层MoS2薄板在其表面上显示出均匀的表面电势和电荷分布,但在边缘,折叠区域以及缺陷晶粒边界上具有相对较低的表面电势。

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