Etching process of silicon oxycarbide from polysiloxane by chlorine

摘要

The etching process of silicon oxycarbide (SiOC) by dry chlorine was investigated as a function of etching temperature. Data show the etching reaction for SiOC can occur at low temperature of 450 degrees C and follows the interface reaction-controlled mechanism at 525 degrees C. At 600 degrees C and above, a visible arising of mesopores was observed owing to the Si-O bond-breaking while microporosity is attributed to Si-c bondbreaking. Increasing etching temperature will lead to better carbon crystallinity and larger porosity. Some carbon-oxygen surface groups and residue silica were determined, whose relative content also depended on the etching temperature. (C)) 2015 Elsevier Ltd. All rights reserved.