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首页> 外文期刊>IEEE Transactions on Applied Superconductivity >Preparation of stacked structures based on HTS by MOCVD: growth problems of c-axis and non c-axis BiSrCaCuO/Bi/sub 4/Ti/sub 3/O/sub 12/ heterostructures
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Preparation of stacked structures based on HTS by MOCVD: growth problems of c-axis and non c-axis BiSrCaCuO/Bi/sub 4/Ti/sub 3/O/sub 12/ heterostructures

机译:通过MOCVD制备基于HTS的堆叠结构:c轴和非c轴BiSrCaCuO / Bi / sub 4 / Ti / sub 3 / O / sub 12 /异质结构的生长问题

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摘要

Several articles report two-layer c-axis heterostructures of Bi/sub 4/Ti/sub 3/O/sub 12/ on BiSrCaCuO. However in some applications, or for integration purposes, multi-layer geometries composed of alternating c-axis or non c-axis thin films might be useful. From this perspective we investigated growth of c-axis and non c-axis BiSrCaCuO on Bi/sub 4/Ti/sub 3/O/sub 12/ structures. The paper mainly focuses on evaluation of the structures from the growth, stability/interdiffusion, uniformity/morphology points of view based on structural and microstructural data.
机译:几篇文章报道了BiSrCaCuO上Bi / sub 4 / Ti / sub 3 / O / sub 12 /的两层c轴异质结构。但是,在某些应用中或出于集成目的,由交替的c轴或非c轴薄膜组成的多层几何结构可能会有用。从这个角度,我们研究了Bi / sub 4 / Ti / sub 3 / O / sub 12 /结构上c轴和非c轴BiSrCaCuO的生长。本文主要基于结构和微观结构数据,从生长,稳定性/相互扩散,均匀性/形态学的角度对结构进行评估。

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