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首页> 外文期刊>Applied physics >Influence of Li-rich vapor transport equilibration on surface refractive index and Mg concentration of MgO (5 mol%)-doped LiNbO_3 crystal
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Influence of Li-rich vapor transport equilibration on surface refractive index and Mg concentration of MgO (5 mol%)-doped LiNbO_3 crystal

机译:富锂蒸气输运平衡对掺MgO(5 mol%)的LiNbO_3晶体的表面折射率和Mg浓度的影响

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摘要

The Li-rich vapor transport equilibration (VTE) effect on surface refractive index of MgO (5 mol%)-doped LiNbO.3 crystal is studied at the wavelengths of 473, 632.8 and 1536 nm. The results show that in the early stage of VTE the ordinary index n_0 decreases substantially with the VTE duration t, then recovers slightly, and tends to a constant for t > 80 h. The extraordinary index n_e shows a similar VTE effect but reveals a relatively weak dependence on the VTE duration. Secondary ion mass spectrometry analysis shows that the VTE induces Mg diffusion within the crystal and hence an inhomogeneous Mg depth profile, depending on the VTE duration. As the VTE is prolonged the Mg homo geneity is improved. The surface Mg concentration, deter mined from the measured surface n_0 and energy dispersive X-ray analysis, shows a substantial VTE duration depen dence, which is responsible for the substantial VTE effect on surface index. Neutron activation analysis shows that the VTE hardly induces the MgO loss from the crystal. It ap pears that the Mg ions counter diffuse to the crystal surface in the early stage of VTE and then diffuse slowly back into the bulk of the crystal toward equilibrium as Li concentra tion tends to equilibrium. Gravimetric measurement shows that the Li_2O content in the crystal increases with the VTE duration in the early stage of VTE and saturates for t > 60 h, and the Li_2O content increase in the saturation regime is about 2.25 mol%.
机译:研究了在473、632.8和1536 nm波长下,富MgO(5 mol%)掺杂LiNbO.3晶体的表面富折射率的富锂气运平衡。结果表明,在VTE的早期,普通指数n_0随VTE持续时间t显着下降,然后略有恢复,并在t> 80 h趋于恒定。非凡指数n_e表现出相似的VTE效果,但显示出对VTE持续时间的依赖性相对较弱。二次离子质谱分析表明,取决于VTE的持续时间,VTE会引起Mg在晶体内的扩散,从而导致Mg深度分布不均匀。随着VTE的延长,Mg的均质性得到改善。由测得的表面n_0和能量色散X射线分析确定的表面Mg浓度显示出显着的VTE持续时间依赖性,这是对表面指数的显着VTE影响的原因。中子活化分析表明,VTE几乎不会引起晶体中MgO的损失。可以看出,Mg离子在VTE的早期反向扩散到晶体表面,然后随着Li浓度趋于平衡而缓慢扩散回到晶体的大部分中,并趋于平衡。重量测量表明,在VTE的早期,晶体中的Li_2O含量随VTE持续时间的增加而增加,并在t> 60 h时达到饱和,并且在饱和状态下Li_2O含量的增加约为2.25 mol%。

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  • 来源
    《Applied physics》 |2011年第1期|p.151-160|共10页
  • 作者单位

    Department of Opto-electronics and Information Engineering, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin 300072, China,Key Laboratory of Optoelectronics Information Technology (Tianjin University), Ministry of Education, Tianjin 300072, China;

    Department of Opto-electronics and Information Engineering, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin 300072, China,Key Laboratory of Optoelectronics Information Technology (Tianjin University), Ministry of Education, Tianjin 300072, China;

    Department of Opto-electronics and Information Engineering, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin 300072, China,Key Laboratory of Optoelectronics Information Technology (Tianjin University), Ministry of Education, Tianjin 300072, China;

    Department of Opto-electronics and Information Engineering, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin 300072, China,Key Laboratory of Optoelectronics Information Technology (Tianjin University), Ministry of Education, Tianjin 300072, China;

    Department of Opto-electronics and Information Engineering, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin 300072, China,Key Laboratory of Optoelectronics Information Technology (Tianjin University), Ministry of Education, Tianjin 300072, China;

    Department of Opto-electronics and Information Engineering, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin 300072, China,Key Laboratory of Optoelectronics Information Technology (Tianjin University), Ministry of Education, Tianjin 300072, China;

    Department of Electronic Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong;

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