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机译:E / D模式GaN MIS-HEMT在Si衬底上超薄势垒AlGaN / GaN异质结构上的单片集成
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China|Univ Chinese Acad Sci, Beijing 100049, Peoples R China;
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China|Univ Chinese Acad Sci, Beijing 100049, Peoples R China;
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China|Univ Chinese Acad Sci, Beijing 100049, Peoples R China;
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China|Univ Chinese Acad Sci, Beijing 100049, Peoples R China;
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China;
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China;
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China;
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China|Univ Chinese Acad Sci, Beijing 100049, Peoples R China;
Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China|Univ Chinese Acad Sci, Beijing 100049, Peoples R China;
Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China;
Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China;
Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China;
Hong Kong Univ Sci & Technol, Kowloon, Clear Water Bay, Hong Kong, Peoples R China;
机译:E / D模式AlGaN / GaN MIS-HEMT的单片集成
机译:使用单片集成E / D模式AlGaN / GaN MIS-HEMT的高压低待机功率启动电路
机译:超薄屏障AlGaN / GaN异质结构:用于制造和整合GaN的功率器件和动力驱动电路的无凹陷技术
机译:单片集成600V E / D模式SiNx / AlGaN / GaN MIS-HEMT及其在开关电源的低待机功率启动电路中的应用
机译:高性能紫外线光电探测器和LED和光电探测器的单片集成在SI上生长的P-GAN / AlGaN / GaN异质结构上的LED和PhotoTopetector
机译:使用低Al组成的单个AlGaN层在Si衬底上生长高质量和均匀的AlGaN / GaN异质结构
机译:栅极介电质量对在200mm Si衬底上开发无金的D型和E型凹栅AlGaN / GaN晶体管的影响
机译:m面alGaN / GaN和alInN / GaN异质结构的外延生长适用于常驻型GaN基板上的常关模式高功率场效应晶体管