Effect of Postdeposition Annealing Temperatures on Electrical Characteristics of Molecular-Beam-Deposited HfO_2 on n-lnAs/lnGaAs Metal-Oxide-Semiconductor Capacitors

摘要

The electrical characteristics of molecular-beam-deposited HfO_2-lnAs/lnGaAs metal-oxide-semiconductor capacitors with different postdeposition annealing (PDA) temperatures (400-550 ℃) are investigated. Results show that the sample with the PDA temperature of 500℃ exhibits the best capacitance-voltage (C-V) behavior with small frequency dispersion and small hysteresis. The X-ray photoelectron spectroscopy (XPS) spectra show the reduction of the amount of As-related oxides to below the XPS detection level when the PDA temperature is up to 500 ℃. As the PDA temperature was increased to above 500 ℃, As and In atoms seem to diffuse significantly into HfO2, resulting in the degradation of C-V behavior.