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Translational MEMS Platform for Planar Optical Switching Fabrics

机译:用于平面光交换结构的平移MEMS平台

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摘要

While 3-D microelectromechanical systems (MEMS) allow switching between a large number of ports in optical telecommunication networks, the development of such systems often suffers from design, fabrication and packaging constraints due to the complex structures, the wafer bonding processes involved, and the tight alignment tolerances between different components. In this work, we present a 2-D translational MEMS platform capable of highly efficient planar optical switching through integration with silicon nitride (SiN) based optical waveguides. The discrete lateral displacement provided by simple parallel plate actuators on opposite sides of the central platform enables switching between different input and output waveguides. The proposed structure can displace the central platform by 3.37 µm in two directions at an actuation voltage of 65 V. Additionally, the parallel plate actuator designed for closing completely the 4.26 µm air gap between the fixed and moving waveguides operates at just 50 V. Eigenmode expansion analysis shows over 99% butt-coupling efficiency the between the SiN waveguides when the gap is closed. Also, 2.5 finite-difference time-domain analysis demonstrates zero cross talk between two parallel SiN waveguides across the length of the platform for a 3.5 µm separation between adjacent waveguides enabling multiple waveguide configuration onto the platform. Different MEMS designs were simulated using static structural analysis in ANSYS. These designs were fabricated with a custom process by AEPONYX Inc. (Montreal, QC, Canada) and through the PiezoMUMPs process of MEMSCAP (Durham, NC, USA).
机译:尽管3-D微机电系统(MEMS)允许在光通信网络中的大量端口之间进行切换,但是由于复杂的结构,所涉及的晶圆键合工艺以及封装的复杂性,此类系统的开发通常会受到设计,制造和封装方面的限制。不同组件之间的对准误差很小。在这项工作中,我们提出了一种二维平移MEMS平台,该平台能够通过与基于氮化硅(SiN)的光波导集成来进行高效的平面光切换。由中央平台相对两侧上的简单平行板致动器提供的离散横向位移可在不同的输入和输出波导之间进行切换。所提议的结构可以在65 V的驱动电压下在两个方向上使中央平台位移3.37 µm。此外,为完全闭合固定和移动波导之间的4.26 µm气隙而设计的平行板驱动器仅在50 V时工作。本征模式扩展分析显示,当间隙闭合时,SiN波导之间的对接耦合效率超过99%。此外,2.5时域有限差分分析表明,在平台的整个长度上,两个平行的SiN波导之间的串扰为零,相邻波导之间的间距为3.5 µm,从而可以在平台上配置多个波导。使用ANSYS中的静态结构分析来模拟不同的MEMS设计。这些设计是由AEPONYX Inc.(加拿大,蒙特利尔,加拿大)采用定制工艺并通过MEMSCAP(美国北卡罗来纳州达勒姆)的PiezoMUMPs工艺制造的。

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