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Fabrication of Smart Chemical Sensors Based on Transition-Doped-Semiconductor Nanostructure Materials with µ-Chips

机译:基于带有微芯片的过渡掺杂半导体纳米结构材料的智能化学传感器的制造

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摘要

Transition metal doped semiconductor nanostructure materials (Sb2O3 doped ZnO microflowers, MFs) are deposited onto tiny µ-chip (surface area, ∼0.02217 cm2) to fabricate a smart chemical sensor for toxic ethanol in phosphate buffer solution (0.1 M PBS). The fabricated chemi-sensor is also exhibited higher sensitivity, large-dynamic concentration ranges, long-term stability, and improved electrochemical performances towards ethanol. The calibration plot is linear (r2 = 0.9989) over the large ethanol concentration ranges (0.17 mM to 0.85 M). The sensitivity and detection limit is ∼5.845 µAcm−2mM−1 and ∼0.11±0.02 mM (signal-to-noise ratio, at a SNR of 3) respectively. Here, doped MFs are prepared by a wet-chemical process using reducing agents in alkaline medium, which characterized by UV/vis., FT-IR, Raman, X-ray photoelectron spectroscopy (XPS), powder X-ray diffraction (XRD), and field-emission scanning electron microscopy (FE-SEM) etc. The fabricated ethanol chemical sensor using Sb2O3-ZnO MFs is simple, reliable, low-sample volume (<70.0 µL), easy of integration, high sensitivity, and excellent stability for the fabrication of efficient I–V sensors on μ-chips.
机译:将过渡金属掺杂的半导体纳米结构材料(掺杂Sb2O3的ZnO微花,MFs)沉积到微小的µ芯片(表面积约为0.02217 cm 2 )上,以制造用于磷酸盐缓冲溶液中有毒乙醇的智能化学传感器。 (0.1 M PBS)。所制造的化学传感器还表现出更高的灵敏度,较大的动态浓度范围,长期稳定性以及对乙醇的改善的电化学性能。在较大的乙醇浓度范围(0.17 mM至0.85 M)上,校准曲线是线性的(r 2 = 0.9989)。灵敏度和检测极限分别为〜5.845 µAcm -2 mM -1 和〜0.11±0.02 mM(信噪比,SNR为3)。此处,掺杂的MF是通过在碱性介质中使用还原剂通过湿化学工艺制备的,其特征在于UV / vis,FT-IR,拉曼,X射线光电子能谱(XPS),粉末X射线衍射(XRD)使用Sb2O3-ZnO MFs制备的乙醇化学传感器简单,可靠,样品体积小(<70.0 µL),易于集成,灵敏度高且稳定性极佳。用于在μ芯片上制造高效的IV传感器。

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