Self-Rectifying Resistive Switching Memory with Ultralow Switching Current in Pt/Ta2O5/HfO2-x/Hf Stack

摘要

In this study, we present a bilayer resistive switching memory device with Pt/Ta2O5/HfO2-x/Hf structure, which shows sub-1 μA ultralow operating current, median switching voltage, adequate ON/OFF ratio, and simultaneously containing excellent self-rectifying characteristics. The control sample with single HfO2-x structure shows bidirectional memory switching properties with symmetrical I–V curve in low resistance state. After introducing a 28-nm-thick Ta2O5 layer on HfO2-x layer, self-rectifying phenomena appeared, with a maximum self-rectifying ratio (RR) of ~4 × 10³ observed at ±0.5 V. Apart from being a series resistance for the cell, the Ta2O5 rectifying layer also served as an oxygen reservoir which remains intact during the whole switching cycle.