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Thermal and UV Hydrosilylation of Alcohol-Based Bifunctional Alkynes on Si (111) surfaces: How surface radicals influence surface bond formation

机译:Si(111)表面上基于醇的双官能炔烃的热和紫外氢化硅烷化:表面自由基如何影响表面键的形成

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摘要

Using two different hydrosilylation methods, low temperature thermal and UV initiation, silicon (111) hydrogenated surfaces were functionalized in presence of an OH-terminated alkyne, a CF3-terminated alkyne and a mixed equimolar ratio of the two alkynes. XPS studies revealed that in the absence of premeditated surface radical through low temperature hydrosilylation, the surface grafting proceeded to form a Si-O-C linkage via nucleophilic reaction through the OH group of the alkyne. This led to a small increase in surface roughness as well as an increase in hydrophobicity and this effect was attributed to the surficial etching of silicon to form nanosize pores (~1–3 nm) by residual water/oxygen as a result of changes to surface polarity from the grafting. Furthermore in the radical-free thermal environment, a mix in equimolar of these two short alkynes can achieve a high contact angle of ~102°, comparable to long alkyl chains grafting reported in literature although surface roughness was relatively mild (rms = ~1 nm). On the other hand, UV initiation on silicon totally reversed the chemical linkages to predominantly Si-C without further compromising the surface roughness, highlighting the importance of surface radicals determining the reactivity of the silicon surface to the selected alkynes.
机译:使用两种不同的氢化硅烷化方法(低温热引发和UV引发),在存在OH末端的炔烃,CF3末端的炔烃和两种炔烃的混合等摩尔比的条件下对硅(111)氢化表面进行官能化。 XPS研究表明,在不存在通过低温氢化硅烷化预先确定的表面自由基的情况下,表面接枝通过经由炔烃OH基团的亲核反应进行,形成Si-O-C键。这导致表面粗糙度的小幅增加以及疏水性的增加,并且这种影响归因于由于表面变化而残留的水/氧气对硅进行了表面蚀刻,从而形成了纳米级的孔(约1-3nm)。接枝的极性。此外,在无自由基的热环境中,这两种短炔烃的等摩尔混合物可以实现约102°的高接触角,与表面报道的相对粗糙的表面粗糙度相对较小(均方根= 1〜1 nm)的文献报道的长烷基链接枝相当。 )。另一方面,硅上的紫外线引发完全将化学键反转为主要为Si-C,而又不进一步损害表面粗糙度,突出了表面自由基确定硅表面与所选炔烃反应性的重要性。

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