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Fabrication of Stacked MoS2 Bilayer with Weak Interlayer Coupling by Reduced Graphene Oxide Spacer

机译:减少的氧化石墨烯间隔层与弱的层间耦合制造堆叠式MoS2双层薄膜

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摘要

We fabricated the stacked bilayer molybdenum disulfide (MoS2) by using reduced graphene oxide (rGO) as a spacer for increasing the optoelectronic properties of MoS2. The rGO can decrease the interlayer coupling between the stacked bilayer MoS2 and retain the direct band gap property of MoS2. We observed a twofold enhancement of the photoluminescence intensity of the stacked MoS2 bilayer. In the Raman scattering, we observed that the E12g and A1g modes of the stacked bilayer MoS2 with rGO were further shifted compared to monolayer MoS2, which is due to the van der Waals (vdW) interaction and the strain effect between the MoS2 and rGO layers. The findings of this study will expand the applicability of monolayer MoS2 for high-performance optoelectronic devices by enhancing the optical properties using a vdW spacer.
机译:我们通过使用还原的氧化石墨烯(rGO)作为间隔物来增加MoS2的光电性能,制造出了堆叠的双层二硫化钼(MoS2)。 rGO可以减少堆叠的双层MoS2之间的层间耦合,并保留MoS2的直接带隙特性。我们观察到堆叠式MoS2双层的光致发光强度提高了两倍。在拉曼散射中,我们观察到,具有rGO的双层MoS2叠层MoS2的E 1 2g和A1g模式与单层MoS2相比进一步移位,这是由于范德华(vdW)相互作用和MoS2和rGO层之间的应变效应。这项研究的发现将通过使用vdW隔离层增强光学性能,从而扩大单层MoS2在高性能光电器件中的适用性。

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