Dataset demonstrating the modeling of a high performance Cu(InGa)Se2 absorber based thin film photovoltaic cell

摘要

The physical data of the semiconductor materials used in the design of a CIGS absorber based thin film photovoltaic cell have been presented in this data article. Besides, the values of the contact parameter and operating conditions of the cell have been reported. Furthermore, by conducting the simulation with data corresponding to the device structure: soda-lime glass (SLG) substrate/Mo back-contact/CIGS absorber/CdS buffer/intrinsic ZnO/Al-doped ZnO window/Al-grid front-contact, the solar cell performance parameters such as open circuit voltage (Voc), short circuit current density Jsc, fill factor (FF), efficiency (η), and collection efficiency ηc have been analyzed.