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Comparison of Cyclic Hysteresis Behavior between Cross-Ply C/SiC and SiC/SiC Ceramic-Matrix Composites

机译:交叉层C / SiC与SiC / SiC陶瓷基复合材料的循环磁滞行为比较

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摘要

In this paper, the comparison of cyclic hysteresis behavior between cross-ply C/SiC and SiC/SiC ceramic-matrix composites (CMCs) has been investigated. The interface slip between fibers and the matrix existed in the matrix cracking mode 3 and mode 5, in which matrix cracking and interface debonding occurred in the 0° plies are considered as the major reason for hysteresis loops of cross-ply CMCs. The hysteresis loops of cross-ply C/SiC and SiC/SiC composites corresponding to different peak stresses have been predicted using present analysis. The damage parameter, i.e., the proportion of matrix cracking mode 3 in the entire matrix cracking modes of the composite, and the hysteresis dissipated energy increase with increasing peak stress. The damage parameter and hysteresis dissipated energy of C/SiC composite under low peak stress are higher than that of SiC/SiC composite; However, at high peak stress, the damage extent inside of cross-ply SiC/SiC composite is higher than that of C/SiC composite as more transverse cracks and matrix cracks connect together.
机译:本文研究了交叉C / SiC与SiC / SiC陶瓷基复合材料(CMCs)的循环磁滞行为的比较。纤维与基体之间的界面滑移存在于基体开裂模式3和模式5中,其中基体开裂和界面剥离在0°层中发生被认为是跨层CMC滞后回线的主要原因。使用目前的分析已经预测了对应于不同峰值应力的交叉C / SiC和SiC / SiC复合材料的磁滞回线。损伤参数,即在复合材料的整个基体开裂模式中基体开裂模式3的比例,以及磁滞耗散能量随峰值应力的增加而增加。低峰值应力下C / SiC复合材料的损伤参数和磁滞耗散能均高于SiC / SiC复合材料。然而,在较高的峰值应力下,交叉的SiC / SiC复合材料内部的破坏程度高于C / SiC复合材料,因为更多的横向裂纹和基体裂纹连接在一起。

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