首页> 中文期刊> 《传感器与微系统》 >应用于RFID的超低功耗CMOS温度传感器设计

应用于RFID的超低功耗CMOS温度传感器设计

         

摘要

针对融合射频识别( RFlD)的无线温度传感器节点设计的需求,采用0. 18μm 1P6M台积电CMOS工艺,设计了一种低功耗集成温度传感器.该温度传感器首先将温度信号转换为电压信号,然后通过经压控振荡器将电压信号转换为受温度控制的频率信号,再通过计数器,将频率信号转换为数字信号.传感器电路利用MOS管工作在亚阈值区,并采用动态阈值技术获得超低功耗.测试结果显示:所设计的温度传感器仅占用0. 051 mm2 ,功耗仅为101 nW,在0~100℃范围内误差为-1. 5~1. 2℃.%Aiming at design demand for wireless temperature sensor node which integrates RFlD,design a low power consumption integrated temperature sensor,using 0. 18 μm 1P6M CMOS process,design an integrated temperature sensor with low power consumption. Firstly,it transfers temperature signal to voltage signal,which is then converted to frequency signal by a voltage-controlled oscillator and the frequency signal is finally converted to digital signal by counter. Sensor circuit works in sub-threshold region and employs dynamic threshold-voltage to achieve ultra-low power consumption. Later period test result show that the designed temperature sensor only covers an area of 0. 051 mm2 ,consumes only 101 nW power with an error -1. 5~1. 2℃,at range of 0~100℃.

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