牵引用3300V/500A SiC混合模块研制

摘要

3 300 V/500 A SiC hybrid module is developed based on insulated gated bipolar transistor(IGBT) and silicon carbide(SiC) Schottky barrier diode which independent development.Module characteristics and thermal resistance are tested and compared with Si IGBT module.Diode thermal resistance of SiC hybrid module is significantly lower than Si IGBT module which can increase the rated current capability.Reverse recovery energy of SiC hybrid module is almost negligible which reduced current and voltage overshoots on IGBT chip during the operation.It is beneficial to the module's long-term reliability.The maximum junction temperature of the SiC hybrid module and IGBT module is obtained by PLECS simulation with pulse width modulation(PWM) condition.The junction temperature of IGBT and SiC diode dies in SiC hybrid module is lower than IGBT module.The successful development of 3 300 V/500 A SiC hybrid module is promoted to the application of SiC material in the locomotive traction field.%基于自主绝缘栅双极晶体管(IGBT)芯片和碳化硅(SiC)肖特基势垒二极管(SBD),研制3 300 V/500 A SiC混合模块,完成模块的性能测试及热阻测试,并与Si IGBT模块进行对比.二极管热阻较Si IGBT模块显著降低,增大模块额定电流能力.SiC混合模块反向恢复能量几乎可忽略,减少模块工作过程中对IGBT芯片的电流和电压过冲,利于模块的长期可靠性.利用PLECS仿真得到脉宽调制(PWM)工况下芯片最高结温,SiC混合模块低于IGBT模块.3 300 V/500 A SiC混合模块的研制成功,对SiC材料在机车牵引领域的应用具有推动作用.