An experimental investigation on the residual stress in porous silicon micro-structure by means of micro-Raman spectros- copy is presented. It is shown by detecting the Raman peak shifts on the surfaces and cross-sections of electrochemical etched porous silicon samples with different porosities that serious residual stresses distribute complicatedly within the whole porous silicon structure. It is proved that micro-Raman spectroscopy is an effective method for residual stress testing on the micro-structures applied in optoelectronics and microelectronics.
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机译:A Primer of Fire Protection Measures and The Appropriate Selection of Flammability Test Methods for Materials and Products for Specific, End-Use Applications
机译:Comparison of methods for measuring and assessing carbon stocks and carbon stock changes in terrestrial carbon pools. How do the accuracy and precision of current methods compare? a systematic review protocol