准连续输出大功率半导体激光器的结温测试

摘要

A measuring method for the junction temperature of Quasi-Continuous Wave(QCW)and high power semiconductor laser diodes was put forward based on the thermal model of a high power semiconductor laser. In experiments, the different spectra and output powers of a 980 nm high power semiconductor laser diode under different pulse widths(5~200μs)were measured and the junction temperature was obtained by the relationship of dX/dT = 0. 3 nm/'C. Furthermore,an approximate analytical equation was deduced on the basis of the thermal model to calculate the junction temperature. The experiment shows that the measured results are in a good agreement with the analytical results. In conclusion,the equation is a convenient method for predicting the junction temperature without meas-uring the spectrum.%基于大功率半导体激光器的热传导模型提出了一种测量准连续输出大功率半导体激光器结温的方法.实验通过测量980 nm大功率半导体激光器在不同电脉冲宽度(5～200μs)下的时域光谱和输出特性dλ/dT＝0.3 nm/℃来确定它的结温；同时,根据热传导模型推导出准连续工作条件下结温的近似解析表达式来验证测量得到激光器的结温.结果表明,实验测量结果和通过解析表达式理论计算结果之间符合得很好.所提出的解析表达式可准确预测大功率半导体激光器在准连续工作条件下的结温而无需测量时域光谱,是一种简便快速的预测方法.