Graphene-driving strain-pre-store engineering enables the epitaxy of strain-free AlN film with low dislocation density for DUV-LED and the unique mechanism of strain-relaxation in QvdW epitaxy was demystified.
展开▼
机译:Research Conducted at University of Science and Technology China Has Updated Our Knowledge about Mineralogy (Stress Relaxation of Three Dimensional Textured Aln Films On Sapphire Substrate By Rapid Thermal Annealing)