锑基二类超晶格中波红外焦平面探测器技术

摘要

Owing to the excellent material performance and device advantage of InAs/GaSb Type-Ⅱsuperlattice such as high quantum efficiency,low dark current and adjustable energy band structure,it has been one of the best choice for the third-generation infrared focal plane arrays detector.Material design,material growth and device technology of MW InAs/GaSb Type-Ⅱsuperlattice are reported.High performance 128 ×128 MW focal plane arrays were fabrica-ted.Dark current density is 1.8 ×10 -7 A/cm2 and quantum efficiency reaches 36.64%.%InAs/GaSbⅡ类超晶格以其特有的量子效率高、暗电流小、能带结构可调等材料性能和器件优势，成为第三代红外探测器技术的最佳选择之一。本文报道了中波InAs/GaSb Ⅱ类超晶格材料的设计、生长、器件工艺技术，制备出了高性能的128×128中波InAs/GaSb Ⅱ类超晶格红外焦平面探测器，像元暗电流密度降到1.8×10-7 A/cm2，量子效率达36.64％。