碲镉汞长波探测器暗电流优化模拟

摘要

报道了利用Silvaco软件对Hg1-xCdxTe （x＝0.22）n-on-p型长波探测器的模拟仿真结果。采用二维简化pn结模型，以品质因子R0 A为标准，模拟计算了载流子寿命、缺陷密度、表面态、p区受主浓度、p区厚度、n区厚度宽度对暗电流的影响，得出在良好的品质因子范围内各个参量可以接受的范围。并针对重要参量利用软件对其复合速率，电流分布，载流子浓度等进行了详细模拟分析，为探测器设计制备提供了参考。%The performance of Hg1 -x CdxTe (x =0.22 )n-on-p type LWIR photodiode is simulated by Silva-co.Referring to quality factor R0 A,the influence of carrier lifetime,defect density,surface states,P-type region doping concentration,thickness of P-type region,thickness and width of N-type region on dark current is simulated by using two-dimension pn junction model.Based on good quality factors,the acceptable range of all parameters is ob-tained.Software is used to simulate and analyze the key parameters’recombination rate,current distribution,carrier concentration,etc.,which provides a reference for detector design and fabrication.