Device Physics Research for Submicron and Deep Submicron Space Microelectronics Devices and Integrated Circuits

摘要

Device physics research for submicron and deep submicron space microelectronics devicesand integrated circuits will be described in three topics. 1. Thin film submicron and deep submicron SOS / CMOS devices and integrated circuits. 2. Deep submicron LDD CMOS devices and integrated circuits. 3. C band and Ku band microwave GaAs MESFET and Ⅲ-V compound hetrojunctionHEMT and HBT devices and integrated circuits.1. Thin Film Submicron and Deep Submicron SOS / CMOS Devices and Integrated Cir-cuitsBy making use of the total quantity of carriers method, we have analyzed in details the be-havior of thin film (0.06-0.2μm) SOS/ MOS structure. This is the foundation for devicephysics of thin film SOI / MOSFET devices and integrated circuits.