单一相Ca2Si膜选择性生长

摘要

磁控溅射系统在恒定溅射功率、Ar气压和Ar气流流量下,直接在Si(100)衬底上沉积两组不同沉积结构的Ca膜.随后,600℃分别真空退火5、6、8、10和12 h.使用XRD、EDAX和FT-IR对结果膜的结构和表面进行了测试.沉积膜的原子与衬底之间利用固相间相互扩散反应从多相共生的Ca-Si系统选择性的生长出单一相的Ca2Si膜.并且确定了沉积膜的结构、退火温度和退火时间是单一相硅化物选择性生长的关因素.%The two groups of Ca films were directly and respectively deposited on Si(100)substrates by Radio Frequency(RF.)magnetron sputtering system(MS)and subsequent were annealed at 600 ℃for 5 h,6 h,8 h,10 h and 12 h in a vacuum furnace.The structural and morphological features of the resultant films are tested by XRD,EDAX and FT-IR.The cubic phase Ca2Si film is grown selectively from Ca-Si system of the existence of multiple silicide phases by an interdiffusion reaction of solid phase between the deposited particles and clusters and substrate constituents.And,the structure of the deposited films,annealing temperature and annealing time are the principal factor for the selective growth.