Zn-Sn-O系统透明导电薄膜的制备及其性能

摘要

The Zn-Sn-O system thin films were prepared by sol-gel process and spin coating technique on silica glasses and then sintered.The reaction of dry gel during sintering was characterized by themogravimetry-differential scanning calorimetry（TG-DSC） and X-ray diffractometry（XRD）.Relatively pure Zn2SnO4 crystalline films and ZnSnO3 crystalline films were gained by controlling the content of components in the sol and the sintering temperature.The resistivity measurements suggest that ZnSnO3 crystal has a lower resistivity than Zn2SnO4.The resistivity of ZnSnO3 film increases after the treatment in N2 while the Zn2SnO4 film decreases sharply.For ZnSnO3 films,a lower resistivity（about 8.0×102Ω·cm-1） is obtained when / is equal to 50.3at%.The X-ray photoelectron spectroscopy（XPS） results show that the oxygen vacancies in Zn2SnO4 lattice were benefit for a lower resistivity while the interstitial cations in ZnSnO3 lattice might be good for resistivity decreasing.The transmittance of both Zn2SnO4 and ZnSnO3 films is over 80% in the range of 400 ~ 900nm.%本文采用溶胶-凝胶（Sol-Gel）过程和旋涂技术,通过高温烧结,得到了Zn-Sn-O系统的薄膜。结合干凝胶的差示扫描热分析（TG-DSC）和薄膜的X射线衍射分析（XRD）,研究了干凝胶在烧结过程中发生的反应。通过控制溶胶的组成和薄膜烧结温度,得到了较纯净的Zn2SnO4晶相薄膜和ZnSnO3晶相薄膜。ZnSnO3晶体薄膜的电阻率显著低于Zn2SnO4晶体薄膜;N2气氛热处理后,ZnSnO3薄膜的电阻率升高而Zn2SnO4薄膜的电阻率大幅降低;当[Zn]/[Zn＋Sn]=50.3at%时,薄膜的晶相仍为ZnSnO3,其电阻率较[Zn]/[Zn＋Sn]=50.0at%的薄膜降低,约为8.0×102Ω.cm-1。通过上述两种晶相薄膜的X射线光电子能谱分析（XPS）,探讨了这两种晶体不同的导电机理：Zn2SnO4晶体通过其中的氧空位导电,而ZnSnO3晶体则以间隙阳离子导电。紫外-可见光透过率（UV-Vis）分析表明：Zn2SnO4和ZnSnO3晶体薄膜在400~900nm的可见光波段的透过率可达80%以上。