This paper presents a new technique in the high dielectric constant composite oxide film preparation. On the basis of nano-compsite high dielectric constant aluminum oxide film growth technology, a new idea of adulterating Si oxide species into the aluminum composite film was proposed. As a result, the specific capacitance and withstanding voltage of the composite oxide film formed at the anodizing voltage of 20 V are enhanced, and the leakage current of the aluminum composite oxide film is reduced through incorporation of Si oxide spec ies.
展开▼
机译:The Mechanism Regulating Film Thickness During Porous Anodic Oxide Growth on Aluminium: Transition from Homogeneously Thick Films During Soft Anodizing to Nodule Formation During Hard Anodizing
机译:Vanadium Oxide Thin Film Formation on Graphene Oxide by Microexplosive Decomposition of Ammonium Peroxovanadate and Its Application as a Sodium Ion Battery Anode