By using 0.15 μm GaAs pHEMT (pseudomorphic high electron mobility transistor) technology,a design of millimeter wave power amplifier microwave monolithic integrated circuit (MMIC) is presented.With careful optimization on circuit structure,this two-stage power amplifier achieves a simulated gain of 15.5 dB with fluctuation of 1 dB from 33 GHz to 37 GHz.A simulated output power of more than 30 dBm in saturation can be drawn from 3 W DC supply with maximum power added efficiency (PAE) of 26%.Rigorous electromagnetic simulation is performed to make sure the simulation results are credible.The whole chip area is 3.99 mm2 including all bond pads.
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机译:A 3.5-GHz-Band GaAs HBT Stage-Bypass-Type Step-Gain Amplifier Using Base-Collector Diode Switches and Its Application to aWiMAX HBT MMIC Power Amplifier Module