一种高性能带隙基准电压源设计

摘要

Compared with the structure of conventional CMOS bandgap voltage reference circuits, a high-performance circuit based on first-order temperature compensation is designed in the paper. A differential amplifier is used for the bandgap reference negative feedback amplifier, while the output biases the PMOS current source to achieve high power supply rejection ratio. The Spectre simulation results show that the circuit has temperature coefficient of 4.18×10-6℃/ from -55℃ to 125℃, and PSRR of -94 dB. It is implemented in SMIC 65 nm CMOS process with area of 0.5×0.1mm2 and power consumption of 0.56 mW.%对比分析传统的CMOS带隙基准电压源电路结构，基于一阶温度补偿设计一种高性能带隙基准电压源。电路采用基本差分放大器作为电路负反馈运放，运放输出用作PMOS电流源偏置，提高共模抑制比。Spectre仿真结果显示在-55~125℃温度范围内温度系数为4.18×10-6/℃，低频下电源抑制比达到-94 dB。在SMIC 65 nm CMOS工艺下，芯片面积为0.5×0.1 mm2，功耗为0.56 mW。