SRAM中器件参数的设计方法

摘要

For embedded SRAM products, to solve the problem of device parameters matching caused by different foundry, first, device parameters in bitcell were extracted based on spice model of foundry by BSIMPROPLUS, second, the trip point, power dissipation, read margin and write margin at different process corner were calculated to get optimal process condition. For example, SNFP process corner was the optimal process condition for dual port SRAM and single port SRAM with 0.13 μm technology node, for 1.2 V VDD, the threshold of pull down, pull up, pass gate were 0.33 V corresponding.%为了解决含有SRAM产品转线时器件参数匹配的问题，首先对晶圆制造厂提供的SPICE模型，使用BSIMPROPLUS软件提取出SRAM单元中器件的阈值、饱和电流、漏电等参数，然后使用提取出的器件参数计算出SRAM单元在不同工艺角的翻转电压、功耗、读写裕度，比较得到最优工艺角。以0.13μm技术节点[1]单端口SRAM和双端口SRAM为例，计算了SRAM单元在不同工艺角下的翻转电压、功耗、读写裕度，得出SNFP工艺角为最优工艺条件，对于1.2 V电源电压，驱动管、负载管、传输管的阈值为0.33 V时SRAM单元的功耗和读写裕度最优。