This review is concerned with the effect of the addition of zirconium as a third element on the heat-resisting properties of Fe_3Al intermetallic compounds and explains their high-temperature oxidation mechanism.The Fe_3Al and Fe_3Al-0.05Zr specimens were isothermally oxidized in the temperature range of 1173~1473 K in synthetic air for 100 h.The formation of the alumina layer approximately obeyed the parabolic rate law,with the exception of short initial stage.The parabolic rate constant values for the Zr-doped Fe_3Al decreased at all tested temperatures.Fe_3Al revealed massive spallation,whereas Fe_3AlZr produced a flat,adherent oxide layer.The microstructure investigations of the alumina scales grown thermally on the Fe_3Al-Zr alloy by means of SEM-EDS showed that they were 1.5~2μm thick and consisted of a small inner columnar layer and an equiaxed outer grain layer.Additionally,very fine(50~150 nm) oxide particles rich in Zr were found across the alumina scales.The addition of Zr significantly affected the oxidation behavior of Fe_3Al by improving the adherence of theα-Al_2O_3 scale.TEM-SAD investigations of the alumina scales on samples prepared using the FIB(Focused Ion Beam) method confirmed the presence of small tetragonal zirconia grains near the scale/gas and alloy/scale interfaces,most of which were formed along alumina grain boundaries(gbs).Zr gb-segregation was found using HRTEM.The role of preferential formation of zirconium oxide along the alumina scale grain boundaries and the effect of Zr gb-segregation on oxidation and scale growth mechanisms were analyzed by means of two-stage oxidation experiments using ^(16)O_2/^(18)O_2.The SIMS oxygen isotope profiles for the Fe_3Al-Zr alloy oxidized at 1373 K, after two-stage oxidation experiments,revealed that oxygen anion diffusion is predominant compared to that of aluminum cation diffusion.
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机译:A Study of Substitution the Element of (La+3) on the Structural and Electrical Properties of the Compound Ferrite (垂势沁.汾没揃抽沁.汾没杉制沁.没遂椙栖水裾汾竏挺摄?锤汳)
机译:利用扫描穿隧显微镜探讨在硒化铟上未氧化表面和氧化表面之介面接合处的电子特性 =Scanning Tunneling Microscope study of InSe Surface Electronic Properties at the Fresh/Oxided Interface Junction