Impact of neutron-induced displacement damage on the single event latchup sensitivity of bulk CMOS SRAM

著录项

• 来源
  《中国物理：英文版》 |2017年第1期|542-546|共5页
• 作者

  Xiao-Yu Pan; Hong-Xia Guo; Yin-Hong Luo; Feng-Qi Zhang; Li-Li Ding; Jia-Nan Wei; Wen Zhao;

  展开▼
• 作者单位

  Northwest Institute of Nuclear Technology, Xi'an 710024, China;

  Northwest Institute of Nuclear Technology, Xi'an 710024, China;

  Northwest Institute of Nuclear Technology, Xi'an 710024, China;

  Northwest Institute of Nuclear Technology, Xi'an 710024, China;

  Northwest Institute of Nuclear Technology, Xi'an 710024, China;

  Northwest Institute of Nuclear Technology, Xi'an 710024, China;

  Northwest Institute of Nuclear Technology, Xi'an 710024, China;

  展开▼
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词