Enhancement of off-state characteristics in junctionless field effect transistor using a field plate

摘要

In this paper,a novel junctionless field effect transistor (JLFET) is proposed.In the presence of a field plate between gate and drain,the gate-induced drain leakage (GIDL) effect is suppressed due to the decrease of lateral band-to-band tunneling probability.Thus,the off-state currentIoff,which is mainly provided by the GIDL current,is reduced.Sentaurus simulation shows that theIoff of the new optimized JLFET is reduced by ～ 2 orders and its sub-threshold swing can reach 76.8 mV/decade with little influence on its on-state currentIon,so its Ion/Ioff ratio is improved by 2 orders of magnitude compared with that of the normal JLFET.Optimization of device parameters such as Φfps (the work difference between field plate and substrate) and LFp (the length of field plate),is also discussed in detail.