采用0.5μm标准CMOS工艺和微机械加工工艺,设计并制作了低成本4×4钨微测辐射热计阵列集成芯片。阵列中每个钨微测辐射热计均由微悬桥结构和钨热敏电阻组成,CMOS读出电路集成在阵列下方。微悬桥结构由表面牺牲层技术实现,不需要任何的光刻工艺。钨微测辐射热计像元尺寸为100μm×100μm,填充因子为20%。测试结果表明,在真空环境下,钨微测辐射热计等效热导为1.31×10-4 W/K,等效热容为1.74×10-7 J/K,热时间常数为1.33 ms。当红外光源的斩波频率为10 Hz时,钨微测辐射热计的电压响应率为1.91×103 V/W,探测率为1.88×107 cm·Hz1/2/W。%This paper introduces the implementation of a low-cost 4 × 4 uncooled infrared tungsten microbolometer array integrated chip in a standard 0. 5 μm CMOS technology and micromachining processes. Each tungsten mi-crobolometer in the array consists of a micro-bridge structure and a Tungsten thermistor. CMOS readout circuit is in-tegrated under the array. The micro-bridge structure can be created by etching the surface sacrificial layer after the CMOS fabrication,without any additional lithography procedure. The microbolometer has a size of 100μm×100μm and a fill factor of 20%. Measurements show the effective thermal conductance of 1. 31×10-4 W/K,the thermal time constant of 1. 33 ms and the effective thermal mass of 1. 74 ×10-7 J/K in vacuum environment. The responsivity of the microbolometer is about 1. 91×104 V/W at 10 Hz and the calculated detectivity is 1. 88×107 cm·Hz1/2/W.
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