p­CuCr0.91Mg0.09O2­Si p­n结的制备与电学特性

摘要

利用射频磁控溅射制备p­CuCr0.91Mg0.09O2­Si异质结。XRD结果表明所制备的纯相CuCr0.91Mg0.09O2薄膜具有(012)取向生长特点，正的霍尔系数确定薄膜的 p 型特性；电流—电压特性测试结果显示 p­CuCr0.91­ Mg0.09O2­Si异质结具有明显的整流特性，结的开启电压约为1.0 V，在−5.0~5.0 V的电压范围内正向电压与反向方向电压比约为8.2。基于p­n+单边突变结理论，对p­CuCr0.91Mg0.09O2­Si异质结的电流曲线进行模拟，模拟结果表明界面状态和串联电阻是影响结整流特性性质的重要因素。%The p­CuCr0.91Mg0.09O2­Si p­n heterogenous junction was synthesized by the radio­frequency magnetron sputtering. The XRD results show that the p­CuCr0.91Mg0.09O2 thin film tends to be oriented on the (012) plane, the positive Hall coefficient confirms p­type nature of the film. The current—voltage characteristic test results show that p­Cu­ Cr0.91Mg0.09O2­Si heterogenous junction is of obvious rectifying, the ratio of forward current to the reverse current is about 8.2 within the applied voltage range of –5.0 − 5.0 V and the turn­on voltage is about 1.0 V. The p­CuCr0.91Mg0.09O2­Si p­n heterogenous junction can be fitted by the theory of p­n+ one­sided step junction, the simulated results indicate that the effects of the interface state and series resistance are important factors for the rectifying property of the junction.