基于1／f噪声变化的pn结二极管辐射效应退化机理研究

摘要

Based on the relationship between ionizing damage effect and displacement damage effect under radiation degradation mechanism of pn-junction diode, and combined with the noise theory of radiation degradation of pn-junction diode, a change law of low frequency noise of pn-junction diode under radiation is found. The inconsistency between the change laws of of two kinds of effects is found. Based on the experimental result, the relationship between two kinds of effects is judged. This relationship can explain the experimental result. This is very important for the device hardening research.%基于pn结二极管辐射效应退化机理中位移效应和电离效应之间的关系，并结合pn结二极管辐射退化的噪声机理，得到了pn结二极管辐射诱导低频噪声的变化规律，发现两种效应引起的二极管噪声变化规律之间的不一致性．根据实验得到的噪声变化规律，判断出了辐射应力条件下两种效应之间的关系，很好地解释了实验中出现的不符合原有理论解释的现象，对器件加固的研究有着重要意义．