等离子体活化硒对电沉积Cu-In-Ga金属预制层硒化的影响

摘要

In this paper, the electrodeposited Cu-In-Ga metallic precursors have been selenized by using plasma activation Se source. The power of plasma has great influence on the grain growth of Cu(In1−xGax)Se2(CIGS). The films were shown to be single phase Cu(In0.7Ga0.3)Se2 when the plasma power was 75W. And the fact that high activity Se promotes the generation of binary selenide phase at a low temperature, thus helping the growth of single phase Cu(In0.7Ga0.3)Se2, was proved by XRD analysis of the films selenized at defferent temperatures and the comparison with the films prepared by ordinary selenization. Solar cells have been prepared and found that the single phase have no influence on battery performance. The efficiency can reach 9.4%by process optimization.%　　使用等离子体活化硒源对电沉积制备的Cu-In-Ga 金属预制层进行了硒化处理时，发现等离子体功率对Cu(In1−xGax)Se2(CIGS)晶粒的生长有重要影响，当等离子体功率为75 W时，制备出单一Cu(In0.7Ga0.3)Se2相的CIGS薄膜.通过对不同衬底温度的等离子体活化硒源硒化的CIGS薄膜进行了研究与分析，并与普通硒化后的薄膜进行对比，发现高活性硒在低温下会促进Ga-Se二元相的生成，从而有利于Cu(In0.7Ga0.3)Se2单相的生长.对等离子体硒化后的CIGS薄膜进行了电池制备，发现单相CIGS薄膜没有显著提高电池性能.通过优化工艺，所制备的CIGS电池效率达到了9.4%.