Charge-trapping memory capacitor with LaTiON or HfLaON serving as charge storage layer is fabricated by reactive sputtering method, and influences of post-deposition annealing (PDA) in NH3 or N2 ambient on its memory characteristics are investigated. It is found that before PDA, the LaTiON sample exhibits better retention characteristic than the HfLaON sample, but the later shows larger memory window (4.8 V at+/−12 V/1 s), and after PDA, the NH3-annealed sample has faster program/erase speed, better retention and endurance properties than the N2-annealed sample, owing to nitridation role of NH3. Furthermore, the HfLaON sample with PDA in NH3achieves a large memory window of 3.8 V at+/−12 V/1 s, and also shows better retention and endurance properties than the LaTiON sample with PDA in NH3.% 采用反应溅射法,分别制备以LaTiON, HfLaON为存储层的金属-氧化物-氮化物-氧化物-硅电容存储器,研究了淀积后退火气氛(N2, NH3)对其存储性能的影响.分析测试表明,退火前LaTiON样品比HfLaON样品具有更好的电荷保持特性,但后者具有更大的存储窗口(编程/擦除电压为+/−12 V时4.8 V)；对于退火样品,由于NH3的氮化作用, NH3退火样品比N2退火样品表现出更快的编程/擦除速度、更好的电荷保持特性和疲劳特性.当编程/擦除电压为+/−12 V时, NH3退火HfLaON样品的存储窗口为3.8 V,且比NH3退火LaTiON样品具有更好的电荷保持特性和疲劳特性.
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