In this paper, ultra-thin Nd2O3 dielectric films are deposited on p-type silicon substrates by advanced atomic layer deposition method. Nd (thd)3 and O3 are used as the reaction precursors separately. The as-grown samples are annealed in N2 atmosphere in a temperature range of 700—900 ◦C. The samples are investigated at room temperature by X-ray photoelectron spectroscopy and the changes of the film composition at different annealing temperatures are discussed in detail. For a higher precursor temperature of 185◦C in the deposition process, the ratio of oxygen to neodymium atoms for the as-grown film is 1.82, which is close to the stoichiometry. Dielectric constant increases from 6.85 to 10.32.% 采用Nd(thd)3和O3作为反应前驱体,利用先进的原子层淀积方法在P型硅(100)衬底上制备了超薄Nd2O3介质膜,并在N2气氛下进行了退火处理.采用X射线光电子能谱仪对薄膜样品组分进行分析.研究结果表明,淀积过程中将前驱体温度从175◦C提高到185◦C后,薄膜的质量得到提高, O/Nd原子比达到1.82,更接近理想的化学计量比,介电常数也从6.85升高到10.32.
展开▼
