N离子注入富氧ZnO薄膜的p型导电及拉曼特性研究

摘要

采用射频磁控溅射法在富氧环境下制备ZnO薄膜,继而结合N离子注入及热退火实现薄膜的N掺杂及p型转变,借助霍尔测试和拉曼光谱研究了N离子注入富氧ZnO薄膜的p型导电及拉曼特性.结果表明,在600◦C温度下退火120 min可获得性能较优的p-ZnO：N薄膜,其空穴浓度约为2.527×1017 cm−3. N离子注入ZnO引入了三个附加拉曼振动模,分别位于274.2,506.7和640.4 cm−1.结合电学及拉曼光谱的分析发现,退火过程中施主缺陷与N受主之间的相互作用对p-ZnO的形成产生重要影响.%The p-type N doped ZnO thin films are fabricated using radio-frequency magnetron sputtering technique in O-rich growth con-dition together with the direct N+ion-implantation and annealing. The conductivities and Raman scattering properties of the samples are studied by Hall measurements and Raman spectra respectively. Hall measurements indicate that the optimal p-type ZnO film can be obtained when the sample is annealed at 600◦C for 120 min in N2 ambience, and its hole concentration is about 2.527×1017 cm−3. N+-implantation induces three additional vibrational modes in ZnO, which are located at 274.2, 506.7 and 640.4 cm−1 respectively. In the process of the annealing, by comparing the electrical properties and Raman speetra of the samples, we find that the competition between intrinsic donor defects and the activation of N acceptors plays a crucial role in the p-type formation of ZnO:N films during annealing.