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Cleaning process in high density plasma chemical vapor deposition reactor.

机译:高密度等离子体化学气相沉积反应器的清洗工艺。

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摘要

One of the major emitters of perfluorocompounds (PFCs) in semiconductor manufacturing is the in situ plasma cleaning procedure performed after the chemical vapor deposition of dielectric thin films. The release of these man-made gases can contribute to the greenhouse effect. To reduce emissions of PFCs, it has developed a new plasma cleaning technology that uses a remote plasma source (RPS) to completely break down fluorine-containing gases into an effective cleaning chemical.; The downstream plasma reactor consists of a plasma source, where the inductive discharge occurs; a transport region, which connects the source to the chamber; and the actual chemical vapor deposition chamber, where the fluorine radicals react with the deposition residues to form non-global-warming volatile byproducts that are pumped through the exhaust. From environmental point of view the overall method has clear benefits, however, with the new technology several new optimization problems arise.; In recent years, semiconductor equipment manufacturers have put in a great effort to improve the production worthiness and the overall effectiveness of the tools. Equipment qualification procedures can be quite expensive and lengthy. The film deposition process stability is of great importance since it can be correlated to the final integrated circuit quality and yield. The chamber cleaning process can affect the stability of the film properties.; The objective of this work is to concern the main aspects of the problems that prevent the remote clean process for achieving both superior chamber cleaning performance and improved environmental friendliness.; In order to meet these significant technical challenges we have developed detailed numerical models of the systems involved in the downstream cleaning process. For the remote plasma source, the detailed plasma-kinetic model has been developed to describe the atomic fluorine production from NF3, CF4, and C2F6 and provided comparison of the effectiveness in decomposition of these parent molecules. In the transport tube the homogeneous and heterogeneous kinetic model was developed to analyze the recombination mechanism of atomic fluorine. To study the optimization process of gas and power consumption in the processing chamber, the numerical 2D modeling of complex plasma-chemical processes was performed.
机译:半导体制造中全氟化合物(PFC)的主要排放物之一是在电介质薄膜化学气相沉积之后执行的“原位”等离子体清洁程序。这些人为气体的释放可导致温室效应。为了减少PFC的排放,它开发了一种新的等离子体清洁技术,该技术使用远程等离子体源(RPS)将含氟气体完全分解为有效的清洁化学物质。下游等离子反应器由等离子源组成,在该处发生感应放电。将源与腔室相连的传输区域;以及实际的化学气相沉积室,其中的氟自由基与沉积残留物反应,形成非全球变暖的挥发性副产物,这些副产物被泵送通过废气。从环境的角度来看,整个方法具有明显的好处,但是,随着新技术的出现,出现了一些新的优化问题。近年来,半导体设备制造商付出了巨大的努力来提高工具的生产价值和整体效率。设备鉴定程序可能非常昂贵且漫长。膜沉积工艺的稳定性非常重要,因为它可以与最终集成电路的质量和成品率相关。腔室清洁过程会影响薄膜性能的稳定性。这项工作的目的是要关注那些问题的主要方面,这些问题会阻止远程清洁过程同时实现出色的腔室清洁性能和改善的环境友好性。为了应对这些重大技术挑战,我们开发了下游清洗过程中涉及的系统的详细数值模型。对于远程等离子体源,已经开发了详细的等离子体动力学模型来描述NF 3 ,CF 4 和C 2 的原子氟生产。 sub> F 6 ,并比较了这些母体分子的分解效果。在输运管中,建立了均相和异相动力学模型来分析原子氟的重组机理。为了研究处理室中气体和功耗的优化过程,对复杂的等离子体化学过程进行了二维二维建模。

著录项

  • 作者

    Iskenderova, Kamilla.;

  • 作者单位

    Drexel University.;

  • 授予单位 Drexel University.;
  • 学科 Physics Fluid and Plasma.; Engineering Chemical.
  • 学位 Ph.D.
  • 年度 2003
  • 页码 p.5582
  • 总页数 139
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 等离子体物理学;
  • 关键词

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