首页> 外文学位 >Solute redistribution and constitutional supercooling effects in vertical Bridgman grown indium gallium antimonide by accelerated crucible rotation technique.
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Solute redistribution and constitutional supercooling effects in vertical Bridgman grown indium gallium antimonide by accelerated crucible rotation technique.

机译:垂直坩埚旋转加速坩埚技术在垂直布里奇曼生长的铟镓铟中的溶质再分布和组织过冷效果。

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摘要

The ternary alloy, InxGa1- xSb, is a compound semiconducting material of compositionally tunable bandgap (0.18 - 0.72 eV), making it desirable for use in photovoltaic, photodetector, and other opto-electronic devices in the infra-red regime. In the past, this material has proven to be difficult to synthesize in bulk due to the large phase separation between the constituent binaries. In this work, InxGa1-xSb has been grown in a state-of-the-art, computer-controlled system based on vertical Bridgman technique designed to allow crucible rotation during solidification of the material to reincorporate excess solute and improve material quality. Independent thermocouples allow for in situ monitoring and maintenance of the temperature to 0.2°C precision during crystal growth, reducing compositional inhomogeneities caused by temperature fluctuations.;A series of experiments has been performed to evaluate the effect of accelerated crucible rotation technique (ACRT) on the structural quality and compositional homogeneity of bulk-grown InxGa 1-xSb for a starting melt composition of x = 0.25. A lowering rate of 3 mm/hr has been employed, for an overall cooling rate of 5.1°C/hr, which deliberately exceeds the threshold for constitutional supercooling. Scanning electron microscopy (SEM) has been performed on samples of In0.18Ga0.82Sb revealing a 92% percent reduction in micro-cracking with the application of ACRT when compared to synthesis performed without rotation. Furthermore; electron probe microscopy (EPMA) indicates an order of magnitude improvement in compositional homogeneity in the direction of growth with the use of ACRT.;Micro-cracking and compositional homogeneity throughout cross-sections of InxGa1-xSb material also indicate areas of improved mixing during solidification, which can be compared to existing models of fluid flow exhibited in ACRT. The boule synthesized with ACRT shows a decrease in compositional deviation of 62% in the first-to-freeze areas of the sample, indicating suppression of supercooling in areas identified as Ekman flow regions. Results also demonstrate evidence of "dead-zones" in the ACRT mixing in the extreme center of the material, which confirms computational models of ACRT-induced fluid flow above the Ekman shear layer.
机译:三元合金InxGa1-xSb是一种成分可调带隙(0.18-0.72 eV)的复合半导体材料,因此非常适合在红外条件下的光伏,光电探测器和其他光电设备中使用。过去,由于组成二元之间的大相分离,事实证明这种材料难以大量合成。在这项工作中,InxGa1-xSb已在基于垂直Bridgman技术的最新计算机控制系统中生长,该系统设计为在材料固化期间允许坩埚旋转,以重新掺入多余的溶质并改善材料质量。独立的热电偶可在晶体生长过程中就地监测和将温度维持在0.2°C的精度,从而减少了由温度波动引起的成分不均匀性。;已进行了一系列实验,以评估加速坩埚旋转技术(ACRT)对温度的影响对于x = 0.25的起始熔体组成,整体生长的InxGa 1-xSb的结构质量和组成均匀性。对于总冷却速率为5.1°C / hr的冷却速率,采用了3 mm / hr的降低速率,这故意超过了结构性过冷的阈值。已对In0.18Ga0.82Sb样品进行了扫描电子显微镜(SEM),与不旋转合成法相比,使用ACRT进行的微裂纹降低了92%。此外;电子探针显微镜(EPMA)指示在使用ACRT的情况下沿生长方向的成分均匀性提高了一个数量级。; InxGa1-xSb材料整个横截面的微裂纹和成分均匀性也表明了凝固过程中混合区域的改善,可以与ACRT中展示的现有流体流模型进行比较。用ACRT合成的晶锭在样品的首次冻结区域显示出62%的成分偏差降低,这表明在识别为Ekman流动区域的区域中过冷得到抑制。结果还证明了ACRT混合在材料的最中心出现“死区”的证据,这证实了ACRT引起的埃克曼剪切层上方流体流动的计算模型。

著录项

  • 作者

    Vogel, K. Juliet.;

  • 作者单位

    Rensselaer Polytechnic Institute.;

  • 授予单位 Rensselaer Polytechnic Institute.;
  • 学科 Condensed matter physics.;Electrical engineering.;Materials science.
  • 学位 Ph.D.
  • 年度 2004
  • 页码 221 p.
  • 总页数 221
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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