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Ultra-wideband WDM VCSEL arrays by lateral heterogeneous integration.

机译:横向异质集成的超宽带WDM VCSEL阵列。

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摘要

Advancements in heterogeneous integration are a driving factor in the development of evermore sophisticated and functional electronic and photonic devices. Such advancements will merge the optical and electronic capabilities of different material systems onto a common integrated device platform.; This thesis presents a new lateral heterogeneous integration technology called nonplanar wafer bonding. The technique is capable of integrating multiple dissimilar semiconductor device structures on the surface of a substrate in a single wafer bond step, leaving different integrated device structures adjacent to each other on the wafer surface. Material characterization and numerical simulations confirm that the material quality is not compromised during the process.; Nonplanar wafer bonding is used to fabricate ultra-wideband wavelength division multiplexed (WDM) vertical-cavity surface-emitting laser (VCSEL) arrays. The optically-pumped VCSEL arrays span 140 nm from 1470 to 1610 nm, a record wavelength span for devices operating in this wavelength range.; The array uses eight wavelength channels to span the 140 nm with all channels separated by precisely 20 nm. All channels in the array operate single mode to at least 65°C with output power uniformity of +/- 1 dB. The ultra-wideband WDM VCSEL arrays are a significant first step toward the development of a single-chip source for optical networks based on coarse WDM (CWDM), a low-cost alternative to traditional dense WDM.; The CWDM VCSEL arrays make use of fully-oxidized distributed Bragg reflectors (DBRs) to provide the wideband reflectivity required for optical feedback and lasing across 140 rim. In addition, a novel optically-pumped active region design is presented. It is demonstrated, with an analytical model and experimental results, that the new active-region design significantly improves the carrier uniformity in the quantum wells and results in a 50% lasing threshold reduction and a 20°C improvement in the peak operating temperature of the devices.; This thesis investigates the integration and fabrication technologies required to fabricate ultra-wideband WDM VCSEL arrays. The complete device design and fabrication process is presented along with actual device results from completed CWDM VCSEL arrays. Future recommendations for improvements are presented, along with a roadmap toward a final electrically-pumped single-chip source for CWDM applications.
机译:异构集成的发展是越来越复杂和功能强大的电子和光子器件发展的驱动因素。这些进步将把不同材料系统的光学和电子功能融合到一个通用的集成设备平台上。本文提出了一种新的横向异质集成技术,称为非平面晶圆键合。该技术能够在单个晶片键合步骤中将多个不同的半导体器件结构集成在基板的表面上,而使不同的集成器件结构在晶片表面上彼此相邻。材料表征和数值模拟证实了在此过程中材料质量没有受到损害。非平面晶片键合用于制造超宽带波分复用(WDM)垂直腔表面发射激光器(VCSEL)阵列。光泵浦VCSEL阵列的波长范围是140 nm,波长范围是1470至1610 nm,这是在该波长范围内工作的设备的记录波长范围。该阵列使用八个波长通道来跨越140 nm,而所有通道都精确地相隔20 nm。阵列中的所有通道均在至少65°C的温度下以单模工作,输出功率均匀性为+/- 1 dB。超宽带WDM VCSEL阵列是开发基于粗糙WDM(CWDM)的光网络单芯片源的重要第一步,CWDM是传统密集WDM的低成本替代方案。 CWDM VCSEL阵列利用完全氧化的分布式布拉格反射器(DBR)提供140边缘的光反馈和激光发射所需的宽带反射率。此外,提出了一种新颖的光泵浦有源区设计。通过分析模型和实验结果证明,新的有源区设计显着改善了量子阱中的载流子均匀性,并导致激光阈值降低了50%,并且峰值工作温度提高了20°C。设备。;本文研究了制造超宽带WDM VCSEL阵列所需的集成和制造技术。与完整的CWDM VCSEL阵列的实际设备结果一起,介绍了完整的设备设计和制造过程。提出了未来的改进建议,以及针对CWDM应用的最终电泵单芯片源的路线图。

著录项

  • 作者

    Geske, Jon.;

  • 作者单位

    University of California, Santa Barbara.;

  • 授予单位 University of California, Santa Barbara.;
  • 学科 Engineering Electronics and Electrical.; Engineering Materials Science.; Engineering Mechanical.
  • 学位 Ph.D.
  • 年度 2004
  • 页码 349 p.
  • 总页数 349
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;工程材料学;机械、仪表工业;
  • 关键词

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