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A new architecture for low-voltage low-phase-noise high-frequency CMOS LC voltage-controlled oscillator.

机译:低压低相位噪声高频CMOS LC压控振荡器的新架构。

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摘要

Presented in this work is a novel design technique for a low-phase-noise high-frequency CMOS voltage-controlled oscillator. Phase noise is generated from electrical noise near DC, the oscillation frequency, and its harmonics. In CMOS technology, low-frequency flicker noise dominates the close-in phase noise of the VCO. The proposed technique minimizes the VCO phase noise by seeking to eliminate the effect of flicker noise on the phase noise. This is accomplished by canceling out the DC component of the impulse sensitivity function (ISF) corresponding to each flicker-noise source, thus preventing the up-conversion of low-frequency noise into phase noise. The proposed circuit topology is a modified version of the complementary cross-coupled transconductance VCO, where additional feedback paths are introduced such that a designer can choose the feedback ratios, transistor sizes, and bias voltages to achieve the previously mentioned design objectives. A step-by-step design algorithm is presented along with a MATLAB script to aid in the computation of the ISFs and the phase noise of the VCO. Using this algorithm, a 5-GHz VCO was designed and fabricated in a 0.18mum CMOS process, and then tested for comparison with simulated results.
机译:这项工作提出了一种用于低相位噪声高频CMOS压控振荡器的新颖设计技术。相位噪声是由直流附近的电噪声,振荡频率及其谐波产生的。在CMOS技术中,低频闪烁噪声主导着VCO的近相噪声。所提出的技术通过设法消除闪烁噪声对相位噪声的影响,将VCO相位噪声降至最低。这是通过消除与每个闪烁噪声源相对应的脉冲敏感度函数(ISF)的DC分量来实现的,从而防止了低频噪声向上转换为相位噪声。拟议中的电路拓扑是互补交叉耦合跨导VCO的修改版,其中引入了额外的反馈路径,以便设计人员可以选择反馈比,晶体管尺寸和偏置电压来实现上述设计目标。提出了逐步设计算法以及MATLAB脚本,以帮助计算ISF和VCO的相位噪声。使用该算法,以0.18μmCMOS工艺设计并制造了5 GHz VCO,然后进行测试以与仿真结果进行比较。

著录项

  • 作者

    Lieu, Anthony D.;

  • 作者单位

    Georgia Institute of Technology.;

  • 授予单位 Georgia Institute of Technology.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2005
  • 页码 142 p.
  • 总页数 142
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;
  • 关键词

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