Heterojunction semiconductor triode: A new vertical device.

摘要

The purpose of this research project has been to design, fabricate and test a novel semiconductor triode. The study focused on the development of a vertical triode utilizing existing planar pHEMT technology. First the methods for improving ft in different transistor configurations will be discussed as well as the development of vertical semiconductor devices. The motivation and theory behind the development of this novel Heterostructure triode will be discussed. The modifications done to improve the performance of the first iteration of the triode will be shown. Results from the first and second iterations of the heterostructure triode, including physical simulations, RF simulations, DC measurements and RF measurements will be presented. Finally, the advantages and disadvantages of the novel devices will be explained.