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Measurements of dielectric properties and dielectric film thickness using fringe-effect sensors and sensor arrays.

机译:使用条纹效应传感器和传感器阵列测量介电性能和介电膜厚度。

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Parallel-plate method is a gold standard for measuring dielectric properties of material under testing (MUT). However, it is less suitable for real-time, dynamic, and in-situ measurements. The alternative to the parallel-plate method is to use a planar interdigitated electrode array, fringe-effect (FE) sensor. However, interpretation of the FE sensor measurements is not easy due to the spatial nonuniformity of the electric excitation field created by the FE sensor and the extraneous contributions from the sensor substrate and unknown stray elements.; For quantitative dielectric measurements using FE sensors, two novel methods are proposed. The first method is based on the theoretical correlation between the impedance measurements obtained with the FE sensor and the dielectric properties of the MUT. The second method is supported by the theoretical model developed from the electroquasistatic form of Maxwell's equations. The dielectric measurement results of both methods are compared with those obtained using the parallel-plate measurements and show excellent agreement.; In order to measure the thickness of dielectric film under testing (FUT), several known methods based on different physical principles are available. However, most of those methods are limited to certain types of films and have difficulties in carrying out in-situ and on-line measurements. There are at least three advantages in using FE sensors to measure the thickness of FUT: First, the FE sensors have a planar structure that needs the access to only one side of dielectric FUT, which enables noninvasive and real-time measurements. Second, with the availability of modern microfabrication techniques, the FE sensors can be miniaturized into sub-mum range that allows for the placement of the FE sensors inside the process and laboratory equipments for the dynamic and in-situ measurements. Third, the FE sensors are much more economical than the other techniques. To obtain the FUT thickness from the FE sensor measurements; a novel method is proposed. For the quantitative verification of the proposed method, two types of FE sensors are used: the commercially available FE sensor, MS-01, and the custom-made FE sensor array consisting of three FE sensors of different interelectrode spacing. The thickness measurement results of each FE sensor are compared with the independently measured thickness results. The comparison demonstrates the excellent efficacy of the proposed method for the measurement of FUT thickness with the FE sensors when the thickness is less than a certain value, which is defined as the maximum estimable thickness of FE sensor equal to two third of the distance between two adjacent electrodes.
机译:平行板法是测量被测材料(MUT)介电性能的金标准。但是,它不太适合实时,动态和原位测量。平行板方法的替代方法是使用平面叉指式电极阵列,边缘效应(FE)传感器。然而,由于FE传感器产生的电激发场在空间上的不均匀性以及来自传感器基板和未知杂散元素的多余贡献,FE传感器测量值的解释并不容易。为了使用FE传感器进行定量介电测量,提出了两种新颖的方法。第一种方法基于使用FE传感器获得的阻抗测量值与MUT的介电特性之间的理论相关性。第二种方法由麦克斯韦方程组的拟静电形式建立的理论模型支持。将两种方法的介电测量结果与使用平行板测量获得的结果进行比较,并显示出极好的一致性。为了测量被测介电膜(FUT)的厚度,可以使用几种基于不同物理原理的已知方法。但是,大多数这些方法仅限于某些类型的胶片,并且难以进行原位和在线测量。使用FE传感器测量FUT的厚度至少具有三个优点:首先,FE传感器具有平面结构,仅需要进入电介质FUT的一侧即可实现无创和实时测量。其次,随着现代微细加工技术的普及,可以将FE传感器小型化至最小范围,从而可以将FE传感器放置在过程和实验室设备内部,以进行动态和现场测量。第三,FE传感器比其他技术更经济。从FE传感器的测量值获得FUT厚度;提出了一种新方法。为了定量验证所提出的方法,使用了两种类型的有限元传感器:市售的有限元传感器MS-01和由三个电极间距不同的有限元传感器组成的定制有限元传感器阵列。将每个FE传感器的厚度测量结果与独立测量的厚度结果进行比较。比较结果表明,当厚度小于一定值时,该方法对于使用FE传感器测量FUT厚度的方法具有出色的功效,该值定义为FE传感器的最大可估计厚度等于两个传感器之间距离的三分之二。相邻电极。

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