Growth and characterization of molybdenum disulfide, molybdenum diselenide, and molybdenum(sulfide, selenide) formed between molybdenum and copper indium(sulfide, selenide) during growth.

摘要

CuIn(Sx,Se1-x)2 is a member of the semiconductor family Cu(Inx,Ga1-x)(Sy,Se1-y) 2 used in thin film photovoltaics. During the formation of a CuIn(S x,Se1-x)2 film, an interfacial layer is created between the semiconductor bulk film and the molybdenum back contact. Structural and chemical properties of the MoCuIn(Sx,Se1-x) 2 were evaluated for CuInSe2, CuInS2, and CuIn(S x,Se1-x)2 films grown by multi-source elemental evaporation. Mo films were reacted in H2S, H2Se, and a mixed H2S/H2Se gas to provide a baseline comparison for the reaction during the growth of the CuIn(Sx,Se1-x) 2 films.; Chemical and structural analysis was performed using Electron Dispersive Spectroscopy (EDS), X-Ray Diffraction (XRD), and Glancing Angle X-Ray Diffraction (GIXRD). The interface between Mo and the semiconductor films was exposed by separating the glass and molybdenum from the semiconductor film. Independent measures were made on the bulk films and on the newly exposed Mo and semiconductor surfaces.; At 550°C Mo reacts with H2Se to form MoSe2. MoSe2 was seen at the interface between Mo and CuIn(Sx,Se 1-x)2 and between Mo and CuInSe2. The reaction of Mo with H2S was much slower and a very thin layer of material was detected, presumably MoS2. A similar thin layer of material was seen at the interface between Mo and CuInS2 but it is not known definitively at this time whether this layer is MoS2 or MoSe 2. Only MoSe2 was seen when the gas mixed was used.