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HYDROPHOBICITY LOSS AND RECOVERY OF SILICONE HIGH VOLTAGE INSULATION

机译:硅高压绝缘的疏水性损失和恢复

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摘要

Most silicone high voltage insulator materials are based on high-consistency, peroxide/heat-cured PDMS elastomers. It has long been known that their original hydrophobic surface is changed to a hydrophilic surface when exposed to corona discharge and that hydrophobic recovery ensues when the corona treatment is discontinued. A variety of surface characterization studies by ourselves (including the present work) and others, using primarily contact angle and XPS techniques, have established that prolonged exposure to corona results in the formation of a silica-like layer of the order of 10 nm thick. Much the same situation prevails with RF plasma treated PDMS. The extensive cross-linking of the silica-like layer makes it brittle and prone to crack during sample handling and measurement. It also suggests that it cannot readily reorient between hydrophilic and hydrophobic states and we believe that the surface restructuring, chain reorientation mechanism of hydrophobic recovery is unlikely to be important except in cases of light corona oxidation before the silica-like layer develops. In our opinion, diffusion of low molecular weight PDMS components is the key mechanism of hydrophobic recovery. These latest studies of PDMS systems, solvent extracted to be free of diffusible species, also show hydrophobic recovery suggesting that low molecular weight PDMS might be produced in-situ by depolymerization.
机译:大多数有机硅高压绝缘子材料均基于高浓度,过氧化物/热固化的PDMS弹性体。早就知道,当暴露于电晕放电时,它们最初的疏水性表面变成亲水性表面,而当中断电晕处理时,疏水性恢复。我们自己(包括本工作)和其他人进行的各种表面表征研究(主要使用接触角和XPS技术)已经确定,长时间暴露于电晕会导致形成约10 nm厚的类二氧化硅层。 RF等离子体处理过的PDMS存在着几乎相同的情况。二氧化硅样层的广泛交联使其变脆并在样品处理和测量过程中易于破裂。这也表明它不能轻易地在亲水状态和疏水状态之间重新定向,并且我们认为,疏水恢复的表面重组,链重新定向机制不太可能重要,除非在二氧化硅样层形成之前进行轻度电晕氧化。我们认为,低分子量PDMS组分的扩散是疏水性回收的关键机制。这些对PDMS系统的最新研究表明,溶剂提取后不含可扩散的物质,也显示出疏水性回收率,这表明低分子量PDMS可能通过解聚反应原位生产。

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