GaN Growth on Si Using ZnO Buffer Layer

摘要

ZnO films were deposited by Pulsed Laser Deposition (PLD) onto silicon substrates to serve as a buffer layer for GaN films grown by MOCVD. A ZnO buffer layer was found to improve the quality of GaN grown on Si. The thermal stability of ZnO as a buffer layer was also examined. It was determined that exposure of ZnO/Si to NH_3 at high temperature (> 600 ℃) results in the decomposition of ZnO and subsequent poor nucleation of GaN. The ZnO layer thickness on GaN quality was found to be important.