Modulation of Energy Band Gap of ZnO Thin Films Grown by Pulsed Laser Deposition

摘要

ZnCdO thin films were deposited on (001) sapphire substrates by pulsed laser deposition. Modulation of the energy band gap of ZnCdO was induced by changing the processing parameters. The optical energy band gap of ZnCdO thin films, measured by photoluminescence and transmittance, changed from 3.289 eV to 3.311 eV due to the variation of annealing temperatures. The change of the optical properties was attributed to the change of the stoichiometry of Zn_xCd_(1-x)O as illustrated by Rutherford backscattering spectroscopy.